In spintronics,general spin injection is achieved by the superlattice,spin valve,tunnel junction,other typical method of spin injection is to dilute magnetic semiconductor such as:GaMnAs.In this paper,spin Fe particles are injected into the GaAs matrix by using the magnetron sputtering to form the granular film(GaAs)19Fe81,in which saturated Hall resistivity ρxys is shown to be 15 μΩ·cm at room temperature,which is about 2 orders larger than that of pure Fe.So the spin injection is successfully realized.
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