The preferred growth of nanosized crystal silicon (nc Si) in doped hydrogenated nanocrystalline silicon (nc Si:H) films which were prepared using plasma enhanced chemical vapor deposition (PECVD) system by RF(13.56?MHz) and DC bias stimulating was found. Its microstructure was investigated using X ray diffraction (XRD), Raman spectrum meter, atomic force microscope (AFM) and high resolution transmission electronic microscope (HRTEM). Nc Si about 10 nm was distributed in the silicon hydrogen amorphous n...
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