【作者】 范丽霞； 卢卓宇； 任峰； 蒋昌忠； 付强；

【Author】 FAN Li-xia, LU Zhuo-yu,REN Feng JIANG Chang-zhong,FU Qiang ( Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China; Department of Physics, Wuhan University, Wuhan 430072, China)

【机构】 武汉大学声光材料与器件教育部重点实验室；

【摘要】 利用扫描电镜附件电子背散射衍射(Electron Backscattering Diffraction,EBSD)技术,用菊池花样质量(JQ)作为应力敏感参数,研究了InGaAsP／InP异质结构缓冲层和外延层界面处的应力分布。更多还原

【Abstract】 We characterize elastic strain fields at the interface between buffer layer and epilayer of InGaAsP/InP hrt-erostructure which have misfit but dislocation-free by Electron Backscattering Diffraction (EBSD) technology based on SEM. Image Quality (IQ) use as the strain sensitive parameters.更多还原