【作者】 王志明； 倪刚； 徐庆宇； 桑海； 都有为；

【Author】 WANG Zhi-ming;NI Gang;XU Qing-yu;SANG Hai;DU You-wei National Laboratory of Solid State Microstructures, Nanjing University Nanjing, 210093, China

【机构】 南京大学固体微结构物理实验室；

【摘要】 我们研究了厚度、基片温度、真空退火温度对磁控射频溅射制备的Ni₈₁Fe₁₉薄膜各向异性磁电阻（AMR）的影响。当膜厚小于100nm时,膜厚对AMR的影响较大;当膜厚大于100nm时,膜厚对AMR的影响逐渐减小;当膜厚大于200nm时,AMR的值趋于恒定。基片温度、真空退火温度对AMR值的提高至关重要,适当地选择这两个温度能使薄膜内的晶粒变大,晶界面积变小,晶界对传导电子的散射减小,从而电阻率下降,AMR效应提高.更多还原

【Abstract】 The anisotropic magnetoresistance （AMR） of Ni₈₁Fe₁₉ thin films deposited by RF magnetron sputteringsystem has been investigated on different thickness, substrate temperature, post annealing temperature. The effect offilm thickness on AMR is obvious for the thinner thickness （<100nm）, the influence of thickness on AMR is graduallyweakened for the larger thickness, the magnitude of AMR is gradually stable for the more larger thickness （>200nm）.The substrate and post annealing temperatures arc crucial to the increment of AMR. The suitable choice about the twotemperatures can make the crystalline grain increased, the areas of crystalline boundare decreased, the scattering ofconduct electron decreased, thus the resistivities fell and the effect of AMR increased.更多还原