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电容—电压测试在TiO2压敏材料晶界势垒研究中的应用
Capacitance-voltage measurement of grain-boundary barrier in TiO2 varistors
【摘要】 通过电容—电压(C-V)测试,测量得到了TiO2WO3压敏电阻的晶界势垒高度以及施主浓度等参数,测试结果显示99.75mol%TiO2+0.25 mol%WO3的样品势垒高度为0.51 eV,施主浓度Nd为1.62×1025/m3.类比ZnO压敏材料,本文认为晶界处吸附的O-、O2-是形成晶界势垒的主要原因.
【Abstract】 The grain-boundary barriers in TiO2WO3 varistor systems were investigated by Capacitance-voltage(C-V) measurement.For 99.75mol% TiO2+ 0.25 mol%WO3 varistor system,the barrier parameters were obtained by C-V experiment:=0.51eV,Nd=1.62×1025/m3.Analogized with ZnO varistors,the O-and O2-was considered to be responsible for the grain-boundary barriers.
- 【文献出处】 枣庄学院学报 ,Journal of Zaozhuang University , 编辑部邮箱 ,2007年02期
- 【分类号】O482.41
- 【被引频次】3
- 【下载频次】209