【摘要】 研究了Pt/Ti/SiO2/Si基片上制备Ba0.7Sr0.3TiO3(BST7/3)薄膜时,基片加热温度和溅射功率对薄膜显微形貌和成相的影响。实验结果表明:常温下低功率溅射的BST7/3薄膜,表面形貌非常平整,但为非晶态物质的堆积;400℃高功率150 W溅射4 h的BST薄膜,其最大表面起伏约为40 nm;400℃低功率、长时间8 h溅射的BST薄膜,其表面起伏约为12 nm;说明在保证BST充分成相的前提下,可以通过控制溅射功率和时间调控BST薄膜的表面形貌,降低表面粗糙度,使之适于后续器件制备工艺。介电性能测量表明,400℃,75 W,8 h溅射获得的BST7/3薄膜体现出典型的位移型铁电体特征;1 kHz薄膜的损耗约为0.04。更多还原

【Abstract】 The influences of substrate temperature and sputtering power on surface morphology and crystallization of BST thin film prepared by RF magnetron sputtering were studied.Thin films fabricated under low sputtering power and at room temperature had perfect surface rough-ness,but no crystallization of BST was found on XRD pattern.Maximum fluctuation of the thin film prepared under 400℃substrate temperature was nearly 40 nm.Thin films sputtered at 75 W sputtering power at 400℃ for 8 h had perfect surface morphology and better crystal-lization properties.These facts indicated that controlling substrate temperature,sputtering power and time could modulate the surface morphology of BST thin films.Di-electric properties measurement indicated that the pre-pared BST thin films were typical displacement type fer-roelectrics;dielectric loss at 1 kHz was about 0.04.更多还原