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基于MOSFET亚微秒固态调制器技术的试验研究
Test principle research for solid-state modulator technique with sub-micro second based on MOSFETs
【摘要】 报道了以高速MOSFET作开关进行的亚微秒强流刚管调制器技术的相关试验研究.试验中以电容作储能器件,感应叠加方式作为输出,并采用特殊的几何形状屏蔽结构,成功调试出了平顶为70 ns、上升与下降沿20 ns、重复频率20~24 kHz可调变、输出最大脉冲电流40 A的小型固态刚管调制器试验装置.
【Abstract】 The test research of solid-state modulator principle employing high-speed MOSFET switches and inductive-adder output was presented.Capacitors were used for storing energy as well as shield configuration with special geometrical shapes.A testing set of the small solid-state modulator was completed with 40 A of the maximum current pulse output,70 nanoseconds of pulse flat-top length and 20 nanoseconds of pulse rise time and 20~24 kHz of the adjustable repetition rate.
【关键词】 固态调制器;
梯形波;
感应叠加;
屏蔽结构;
【Key words】 solid-state modulator; trapezoid-wave; inductive-adder; shield configuration;
【Key words】 solid-state modulator; trapezoid-wave; inductive-adder; shield configuration;
【基金】 国家自然科学基金(10175062,17175100)资助
- 【文献出处】 中国科学技术大学学报 ,Journal of University of Science and Technology of China , 编辑部邮箱 ,2007年01期
- 【分类号】TN761
- 【被引频次】10
- 【下载频次】128