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高阻ITO基板上电化学沉积ZnO薄膜的研究

Electrochemical Deposition ZnO Thin Film on High Sheet Resistance ITO Glass Substrate

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【作者】 侯旭峰荆海谷长栋张会平

【Author】 HOU Xu-feng1,2,3,JING Hai1,4,GU Chang-dong5,ZHANG Hui-ping5(1.Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;2.Graduate School of Chinese Academy of Sciences,Beijing 100039,China;3.Jilin Beifang Caijing Digital Electronics Co.,Ltd,Changchun 130033,China;4.North Liquid Crystal Display Engineering Research and Development Center,Changchun 130033,China;5.Key Laboratory of Automobile Materials,Ministry of Education,College of Materials Science and Engineering,Jilin University,Changchun 130025,China)

【机构】 中国科学院长春光学精密机械与物理研究所吉林大学材料科学与工程学院吉林大学汽车材料教育部重点实验室吉林大学材料科学与工程学院吉林大学汽车材料教育部重点实验室 吉林长春130033中国科学院研究生院北京100039吉林北方彩晶数码电子有限公司吉林长春130033吉林长春130033北方液晶工程研究开发中心吉林长春130022吉林长春130025

【摘要】 利用电化学沉积法,以65±1℃的0.1mol/LZn(NO3)2水溶液作为电解质溶液,在方块电阻为118Ω/□的氧化铟锡(ITO)玻璃基板上制备了ZnO薄膜。利用扫描电镜观察了ZnO薄膜表面形貌,结果表明随着电极电势的降低或沉积时间的增加,ZnO薄膜表面颗粒的六方形结构逐渐明显。利用X射线衍射技术分析了阴极电势和沉积时间对ZnO薄膜择优取向的影响,结果表明ZnO薄膜的(002)择优取向是随电极电势的下降而逐渐减弱的,而且随沉积时间的增加(002)择优取向也逐渐减弱。透射光谱测量表明,实验所获得的ZnO薄膜在可见光范围内是透光的,平均透过率高达80%~90%,不同阴极电势下的禁带宽度均为3.5eV左右,且在阴极电势为-2.5V时,禁带宽度随沉积时间的增加而逐渐减小。

【Abstract】 ZnO thin films were electrochemically deposited onto an indium tin oxide(ITO)glass substrate with a high sheet-resistance of 118 Ω/□ from an electrolyte consisted of 0.1 mL Zn(NO3)2 aqueous solution at 65±1 ℃.The surface morphology of the ZnO thin films was characterized by scanning electron microscope(SEM)and the results showed that the hexagonal structure on the ZnO thin films gradually become obvious with the increasing of the deposition time or reducing of cathode potential.X-ray diffraction(XRD)was used to analyze the effect of cathode potential and deposition time on preferred orientation of the ZnO thin film.It showed that(002)preferred orientation of the ZnO thin film decrease with reducing the potential and increasing the deposition.Optical transmittance spectra of the ZnO thin films showed the obtained ZnO films are transparent to visible light and the average optical transmittance values of ZnO thin films were about 80 %~90%.In addition,the bandgap energy which was independent of the applied cathode potential was about 3.5 eV,while it would shift towards low values as the deposition time increased at an applied cathode potential of-2.5 V.

【基金】 国家自然科学基金(No.60576056);国家“863”计划(No.2004AA303560)资助项目
  • 【文献出处】 液晶与显示 ,Chinese Journal of Liquid Crystals and Displays , 编辑部邮箱 ,2007年01期
  • 【分类号】O484
  • 【被引频次】6
  • 【下载频次】404
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