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射频磁控溅射制备声表面波器件用ZnO薄膜

Effects of Sputtering Conditions on Properties of ZnO Films Prepared by RF Magnetron Sputtering for SAW Applications

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【作者】 郑泽渔张树人杨成韬钟朝位董加和孙明霞刘敬松

【Author】 ZHENG Ze-yu,ZHANG Shu-ren,YANG Cheng-tao,ZHONG Chao-wei,DONG Jia-he,SUN Ming-xia,LIU Jing-song (School of Microelectronic and Solid-State Electronic,University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】 电子科技大学微电子与固体电子学院电子科技大学微电子与固体电子学院 四川成都610054四川成都610054

【摘要】 研究了采用射频磁控溅射法在SiO2/Si衬底上制备ZnO薄膜工艺中溅射功率、氧氩比(V(O2)/V(Ar))及衬底温度对ZnO薄膜结构的影响。利用X-射线衍射(XRD)和扫描力显微镜(AFM)对薄膜进行结构性能分析,表明其结构性能随工艺参数变化的规律。利用优化的工艺条件:射频功率60 W、V(O2)/V(Ar)为0.55和衬底温度350℃,在DLC/Si衬底上制备了ZnO薄膜,制作加工成声表面波滤波器件,测试分析了频率响应特性,中心频率为596.5 MHz。

【Abstract】 This study investigated the microstructure of ZnO films deposited on SiO2/Si substrate with different sputtering conditions of RF power,V(O2)/V(Ar) ratio and substrate temperature.ZnO films were prepared on DLC/Si substrate under the optimized parameters such as the RF power of 60 W,V(O2)/V(Ar) ratio of 0.55 and substrate temperature of 350 ℃.Finally,interdigital transducers were fabricated on the films to measure the characteristics of the SAW device,and the frequency response was analyzed.The center frequency was measured at about 596.5 MHz.

  • 【文献出处】 压电与声光 ,Piezoelectrics & Acoustooptics , 编辑部邮箱 ,2007年01期
  • 【分类号】O484.1
  • 【被引频次】4
  • 【下载频次】313
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