【摘要】 研究了采用射频磁控溅射法在SiO2/Si衬底上制备ZnO薄膜工艺中溅射功率、氧氩比(V(O2)/V(Ar))及衬底温度对ZnO薄膜结构的影响。利用X-射线衍射(XRD)和扫描力显微镜(AFM)对薄膜进行结构性能分析,表明其结构性能随工艺参数变化的规律。利用优化的工艺条件:射频功率60 W、V(O2)/V(Ar)为0.55和衬底温度350℃,在DLC/Si衬底上制备了ZnO薄膜,制作加工成声表面波滤波器件,测试分析了频率响应特性,中心频率为596.5 MHz。更多还原

【Abstract】 This study investigated the microstructure of ZnO films deposited on SiO2/Si substrate with different sputtering conditions of RF power,V(O2)/V(Ar) ratio and substrate temperature.ZnO films were prepared on DLC/Si substrate under the optimized parameters such as the RF power of 60 W,V(O2)/V(Ar) ratio of 0.55 and substrate temperature of 350 ℃.Finally,interdigital transducers were fabricated on the films to measure the characteristics of the SAW device,and the frequency response was analyzed.The center frequency was measured at about 596.5 MHz.更多还原