节点文献
一种应用于LDO的CMOS误差放大器设计
Design of a CMOS Error Amplifier Uesd in LDO
【摘要】 采用0.6μm标准CMOS工艺,设计并实现了可作为LDO内部误差放大器使用的一种宽工作电压范围单电源CMOS误差放大器,该误差放大器具有较大的工作电压范围(2.5V~6.5V),而且对工艺参数不敏感,尤其对温度。模拟结果表明:在2.5V~6.5V工作电压范围内,共模输入范围为0.7V~1.465V,差模输入范围为±2.5VT,开环电压增益为AV≈75dB,相位裕度Φ≈65°,单位增益带宽GB≈9.4MHz,共模拟制比CMRR≈74dB,电源拟制比SPRR≈97.5dB,转换速率Sr≈18V/μs。
【Abstract】 Using 0.6μm standard process designed and realized A Error Amplifier,which can be used an internal Error Amplifier in LDO. This Error Amplifier can opeate under a wide range of power supply from 2.5V to 6.5V and insensitive to process variatin, especilly for temprature. Simulation results indicated: under the power supply of 2.5V~ 6.5V, the common input voltage is 0.7V~1.465V, the diference input voltage is ±2.5VT,open-loop voltage gain is about 75dB, phase margin is about 65°, unity gain bandwidth is about 9.4MHz, common mode rejection ratio is about 74dB, power supply rejection ratio is about 97.5dB, slew rate is about 18V/μs.
【Key words】 error amplifier; nested miller compensation; common mode rejection ratio; power supply rejection ration; slew rate;
- 【文献出处】 微电子学与计算机 ,Microelectronics & Computer , 编辑部邮箱 ,2007年04期
- 【分类号】TN722
- 【被引频次】11
- 【下载频次】825