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适用于Flash Memory的负高压泵的实现
Implementation of Negative High-Voltage Charge-Pump for Flash
【摘要】 提出一种适用于单电源,低电压供电的FlashMemory的负高压电荷泵的实现方法。在分析传统电荷泵工作原理的基础上,结合Flash工作电压和参数要求,提出三阱工艺,无阈值损失的负高压电荷泵电路结构。最后在0.22!mFlash工艺下给出测试结果。
【Abstract】 An implementation of negative high-voltage charge pump used for single and low-voltage power flash memory is proposed in this paper. Based on the analysis of the traditional charge pump, referred to the working conditions and parameter requirements of Flash memory, a new structure of triple-well negative high-voltage charge pump without threshold loss is brought forward. The result of test (SMIC 0.22um Flash) is given at the last section.
【关键词】 半导体技术;
快闪存储器;
电荷泵;
负高压;
三阱工艺;
【Key words】 Semiconductor technology; Flash memory; Charge pump; Negative high voltage; Triple-well technology;
【Key words】 Semiconductor technology; Flash memory; Charge pump; Negative high voltage; Triple-well technology;
- 【文献出处】 微电子学与计算机 ,Microelectronics & Computer , 编辑部邮箱 ,2007年01期
- 【分类号】TP333.5
- 【被引频次】9
- 【下载频次】113