【摘要】 用Cl2,HBr,O2和CF4为反应气体,对多晶硅栅进行了刻蚀试验,并借助X射线能谱仪器En-ergy Dispersive X-ray Spectrometry(EDS)进行试验样品的化学成分测定和数据分析。结果表明,淀积附着物主要是以硅元素为主体,溴、氯和氧次之的聚合物,在淀积的动态过程中,HBr起到了主要的作用,Cl2和O2在一定程度上也促进了淀积过程的进行,在工艺过程中氟元素起到了清除淀积物的作用。最后通过试验得到了反应腔室表面附着物淀积的机理性结论。更多还原

【Abstract】 Polycrystalline silicon gratings were etched using Cl2,HBr,O2 and CF4 as reaction gases and the resultants forming on chamber wall during etching was investigated by energy dispersive X-ray spectrometry.The results indicate that the resultants are composed of Si,Br,Cl and O and Si is the main component.The dynamic analysis shows that HBr plays an important role in the process of forming the resultants and Cl2 and O2 facilitate formation of the resultants,and F eliminates the resultants.更多还原