【摘要】 对各种去胶技术的原理、优缺点及其适用场合进行了综述,并结合本实验室的电铸Ni结构去胶试验,对强碱熔盐浴氧化、强酸氧化等经济有效的去胶方法进行了有益发展。最后介绍了SU-8辅助去胶技术,如辅助剥离牺牲层技术、辅助电铸结构抵抗去胶剥落的桩基形成技术。提出了一种与多层互连电路微制造兼容的金属桩基形成技术,并采用强酸氧化去胶方法在制作有互联电路及薄膜电极的基片上成功地集成了200μm厚的Ni结构。更多还原

【Abstract】 Remove of crosslinked SU-8 photoresist mold has been a particularly difficult challenge,which dramatically limits its wide application in making high aspect ratio MEMS structure.The remove techniques which are usually employed can be classified into three categories:(1) mechanical and physical techniques,(2) dry chemical techniques,and(3) wet chemical techniques.According to this classification,the remove mechanism,advantages and shortcomings,as well as application scope of each remove technique as mentioned above,were reviewed.By the experiments on remove SU-8 mold with the electroplated nickel structures,the efficient remove techniques with a low cost such as molten salt bath oxidizing and strong acid oxidizing were improved in our laboratory.Finally,the aided removal techniques such as stripping of the sacrificial layer and foundation construction for electroplated structures against ablation from the substrate were introduced.Additionally,a new metal foundation construction method which was compatible with multilevel interconnections microfabrication was proposed and an integration of the Ni structures with a thickness of 200 μm on a substrate with the interconnection circuits and thin film electrodes was successfully achieved by removing of the SU-8 mold using strong acid oxidizing method.更多还原