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应力导致InAs/In_0.15Ga_0.85As量子点结构中In_0.15Ga_0.85As阱层的合金分解效应研究

Strain-driven alloy decomposition of In_0.15Ga_0.85As well layers in InAs/In_0.15Ga_0.85As dots-in-a-well structure

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【Author】 Wang Chong 1)2) Liu Zhao-Lin 2) Chen Ping-Ping 2) Cui Hao-Yang 2) Xia Chang-Sheng 2) Yang Yu 1) Lu Wei 2) 1)(Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China) 2)(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)

【机构】云南大学工程技术研究院；中国科学院上海技术物理研究所红外物理国家重点实验室上海200083；中国科学院上海技术物理研究所红外物理国家重点实验室；昆明650091；上海200083；

【摘要】利用固源分子束外延技术,在In0.15Ga0.85As/GaAs量子阱生长了两个InAs/In0.15Ga0.85As量子点(DWELL)样品.通过改变其中一个InAsDWELL样品中的In0.15Ga0.85As阱层的厚度和生长温度,获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果,发现该样品量子点的光学性质也同时得到了极大的优化.基于有效质量近似的数值计算结果表明:量子点后生长过程中应力导致In0.15Ga0.85As阱层合金分解机理是导致量子点尺寸和光学性质得到优化的主要原因.更多还原

【Abstract】 Two InAs/In0.15 Ga0.85 As quantum dots-in-a-well （DWELL） samples have been grown by solid source molecular beam epitaxy （MBE）. The increased size of InAs dots and more homogeneous dot-size distribution have been found in one InAs DWELL sample with growth optimized by changing both the growth temperature and the thickness in In0.15 Ga0.85 As well layers. The improved optical properties of this sample have also been confirmed by photoluminescence （PL） and piezomodulated reflectance （PzR） spectra. The numerical calculations based on effective mass approximation indicate that the increase of dot size and the improved optical properties are dominantly due to the strain driven alloy decomposition of In_0.15Ga_0.85As well layers.更多还原