【摘要】 用熔融法结合放电等离子烧结方法合成了Zn掺杂单相p型Ge基Ⅰ型笼合物Ba8Ga16ZnxGe30-x(x=3,4,5,6),探索Zn取代Ge对其热电性能的影响规律,结果表明:所制备的Ba8Ga16ZnxGe30-x化合物为p型传导,随Zn取代量x的增加,化合物室温载流子浓度Np逐渐增加,室温载流子迁移率μH和电导率逐渐降低.在所有试样中,Ba8Ga16Zn3Ge27化合物的Seebeck系数α在300—870K内始终最大,温度为300K时Seebeck系数为234μV/K,在700K附近达295μV/K.化合物的热导率随Zn取代量x的增加而降低.Ba8Ga16Zn3Ge27化合物在806K最大ZT值达0.38.更多还原

【Abstract】 Ba₈Ga 16Zn_xGe 30-x（x=3,4,5,6）clathrates with different Zn contente were synthesized by melt method reaction and spark plasma sintering.The effect of Zn composition on the thermoelectric properties were investigated.The results show that all samples behave p-type conductor.The electric conductivity and room-temperature carrier mobility decrease with increasing Zn content,and the room-temperature carrier density N_p increases with increasing Zn content.Of all p-type Ba₈Ga 16Zn_xGe 30-x compounds,Ba₈Ga 16Zn₃Ge 27 has the highest Seebeck coefficient,the value of which is 234 μV·K-1 at 300 K,and reaches as high as 295 μV·K-1 around 700 K.The thermal conductivity of Ba₈Ga 16Zn_xGe 30-x decrease with increasing x.The maximum ZT value of 0.38 is obtained at 806 K for Ba₈Ga 16Zn₃Ge 27.更多还原