节点文献

双δ掺杂In_0.65Ga_0.35As/In_0.52Al_0.48As赝型高迁移率晶体管材料子带电子特性研究

Observations on subband electron properties in In_0.65Ga_0.35As/In_0.52Al_0.48As MM-HEMT with Si δ-doped on the barriers

推荐 CAJ下载
PDF下载
不支持迅雷等下载工具，请取消加速工具后下载。

【作者】周文政；林铁；商丽燕；黄志明；朱博；崔利杰；高宏玲；李东临；郭少令；桂永胜；褚君浩；

【Author】 Zhou Wen-Zheng 1)2)Lin Tie 1)Shang Li-Yan 1)Huang Zhi-Ming 1)Zhu Bo 1)Cui Li-Jie 3)Gao Hong-Ling 3)Li Dong-Lin 3)Guo Shao-Ling 1)Gui Yong-Sheng 1)Chu Jun-Hao 1)4)1)(National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)2)(College of Physics Science and Engineering Technology,Guangxi University,Nanning 530004,China)3)(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)4)(ECNU-SITP Joint Laboratory for Imaging Information,East China Normal University,Shanghai 200062,China)

【机构】中国科学院上海技术物理研究所红外物理国家重点实验室；中国科学院半导体研究所；中国科学院上海技术物理研究所红外物理国家重点实验室上海200083广西大学物理科学与工程技术学院；南宁530004；上海200083；北京100083；上海200083华东师范大学ECNU-SITP成像信息联合实验室；上海200062；

【摘要】研究了基于InP基的In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-deHaas(SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.更多还原

【Abstract】 Magneto-transport measurements have been carried out on a Si δ-doped In_ 0.65Ga_ 0.35As/In_ 0.52Al_ 0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60K under magnetic field up to 13T.We studied the Shubnikov-de Haas(SdH)effect and the Hall effect for the In_ 0.65Ga_ 0.35As/In_ 0.52Al_ 0.48As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively.We solve the Schrdinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band,the distribution of carriers concentration,the energy level of every subband and the Fermi energy.The calculational results are well consistent with the results of experiments.Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60K.更多还原