【摘要】 分别考虑气相扩散和掩膜表面扩散过程,建立了金属有机化学气相沉积条件下横向外延过生长的速率模型.在砷化镓衬底上外延磷化铟条件下,模拟得到了生长速率随掩膜/窗口宽度(m/w)变化的关系.通过讨论掩膜/窗口宽度的影响,说明了掩膜宽度、窗口宽度以及有效掩膜宽度是决定生长速率的关键因素.以上结论与实验结果一致.更多还原

【Abstract】 Theoretical expressions of the epitaxial lateral overgrowth rate in the metalorganic chemical vapor deposition (MOCVD) have been formulated in this paper, with respect to two separate processes: vapor phase diffusion and mask surface diffusion. In the case of InP deposition on GaAs substrate, a parametric study was accomplished in order to determine the impact of the mask/window width to the growth rate. The model, which uses a new parameter .effective mask length" L_ mask , reveals that the key factors determining the growth rate are mask/window width and mask width/effective mask length. This model can be used as a tool for predict the growth conditions leading to expected growth rate.更多还原