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ZnO纳米线双绝缘层结构电致发光器件制备及特性研究
Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure
【摘要】 在利用液相法生长ZnO纳米线薄膜的基础上,构造成功基于ZnO纳米线双绝缘层结构的交流电致发光器件.此器件呈现出良好的阻容特性,在室温下以一定频率的交流电压驱动,可观察到近紫外波段387nm处和可见光波段552nm处的发射谱带.从阻容结构的导电特性及ZnO纳米线材料的能带结构等方面探讨了这种器件的电致发光机理及频率特性.
【Abstract】 ZnO nanowire thin film was prepared by chemical solution method and a ZnO nanowire-based electroluminescence device has been successfully developed.The device was driven by the alternating current and presented a good RC behavior.Under the action of applied bias,light emission in the ultraviolet region with the wavelength of 387 nm and in the visible region with 552 nm has been observed.The mechanism of electroluminescence and its frequency dependence are discussed in this paper by analyzing the electric properties of the device and the structure of energy band of ZnO semiconductor.
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,2007年04期
- 【分类号】O472.3
- 【被引频次】36
- 【下载频次】558