【摘要】 将V2O5粉体与WO3粉体均匀混合并压制成靶,用离子束增强沉积加后退火技术在SiO2衬底上制备掺钨VO2多晶薄膜.X射线衍射表明,薄膜取向单一,为VO2结构的[002]相,晶格参数d比VO2粉晶增大约0.34%;薄膜从半导体相向金属相转变的相变温度约28℃;室温(300K)时的电阻-温度系数(TCR)可大于10%/K,是目前红外热成像薄膜TCR的四倍.W离子的半径大于V离子的半径,W的掺入在薄膜中引入了张应力,使薄膜相变温度降低到室温附近,是IBEDV0.97W0.03O2薄膜的室温电阻温度系数提高的原因.更多还原

【Abstract】 The W doped vanadium oxide film was deposited on the SiO₂ substrate by modified ion beam enhanced deposition（IBED）method.The V₂O₅ and WO₃ mixed powders,atom ratio of W/V being 3/97,were pressed as the sputtering target.After annealed in Ar or N₂ the polycrystalline IBED VO₂ film doped with tungsten was obtained.The annealed IBED V 0.97W 0.03O₂ film was orientated only to [002] of VO₂ structure,and the latice parameter d was larger than that of VO₂ crystal powder measured by X-ray diffraction.The results of resistance-temperature test showed that the phase transition temperature was decreased from 68℃ to 28℃.The thermal coefficient of resistance（TCR）was high up to 10 %/K at 300K.With the ionic radius of tungsten larger than the radius of vanadium,W 6+ ion doping would induce a tension stress into the film.As a result,the transition temperature of the W-doped VO₂ films was decreased to the room temperature,and the TCR was increased greatly.更多还原