【摘要】 采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度Ts/Tm(Ts是沉积温度,Tm是材料熔点)的依赖性与薄膜生长方式转变行为.随着Ts/Tm增加,薄膜表面粗糙度增加,而表征粗糙度随时间演化特征的生长指数β历经了先减小再增加的过程.β对Ts/Tm的依赖关系反映了薄膜生长方式的转变行为,即薄膜生长依次由随机生长方式向表面扩散驱动生长方式与异常标度行为生长方式转变.在低于体扩散控制薄膜生长的温度时,晶界扩散机理导致多晶薄膜的表面粗化的异常标度行为.更多还原

【Abstract】 Surface roughening of Cu and Ta polycrystalline thin films deposited by magnetron sputtering at different homologous temperature T-s/T-m (T-s and T-m are the substrate temperature and the material melting point, respectively) have been studied using atomic force microscopy. With increasing T-s/T-m, the surface roughness of the films increased and growth exponent first increased and then decreased. The observed temperature dependence of growth exponent indicates a transition of growth modes from random growth at lower T-s/T-m through surface diffusion-dominated growth at intermediate T-s/T-m to anomalous scaling growth at higher T-s/T-m. We also found that the surface roughening of the films reflects the anomalous scaling behavior when the value of T-s/T-m is lower than 0.41, which implies that the boundary diffusion mechanism plays an important role in the scaling behavior of surface roughening.更多还原