【摘要】 对于低压功率沟槽MOSFET的开关性能,栅-漏电荷Qgd是一个重要的参数。本文利用数值模拟软件TCAD(器件与工艺计算机辅助设计),研究了氧化层厚度、沟道杂质分布、外延层杂质浓度及沟槽深度等参数对功率沟槽MOSFET的栅-漏电容Cgd的影响以及栅-漏电荷Qgd在开关过程中的变化,指出了在工艺设计上减小栅-漏电容Cgd,降低器件优值,提高开关性能的途径。更多还原

【Abstract】 For the switching performance of low-voltage power trench MOSFET, the gate- drain charge Qgd is an important parameter. The paper has researched the main elements that affect on the gate-drain capacitance Cgd of low voltage power trench MOSFET and variety of gate-drain charge Qgd in the switching process with TCAD, such as the oxide thickness, the channel profile, the epitaxial layer concentration, the trench depth and etc. Approaches to reducing gate-drain capacitance Cgd and FOM, improving switching performance in design and process are presented.更多还原