【摘要】 根据REUSRF原理,对器件参数进行优化。采用与常规CMOS工艺兼容的技术,在SIMOX片上制备了薄膜SOI LDMOS功率器件。器件呈现良好的电学性能:漏极偏压5V时,泄漏电流仅为1nA;当漂移区长度为4μm时,关态击穿电压达到50V,开态击穿电压大于20V;器件的输出曲线在饱和区光滑,未呈现翘曲现象,说明体接触有效地抑制了部分耗尽器件的浮体效应。这种SOI LDMOS结构非常适合高温环境下功率电子方面的应用开发。更多还原

【Abstract】 SOI LDMOS power device was optimized according to the RESURF(Reduced Surface Field) principle,and was fabricated on SIMOX wafer with a process compatible with the conventional SOI CMOS technology.It shows good electrical performance including a block voltage capability of 50V,a leakage current of 1nA,a flat output characteristic curves without any kink effects indicating the validity of body contact.The device has promising prospective for power electronics in high-temperature environments.更多还原