节点文献
背腐蚀法分离p-n结的研究
STUDY ON THE p-n JUNCTION SEPARATION BY BACK ETCHING
【摘要】 采用正面无保护的背腐蚀方法分离p-n结,用SEM图观察了背腐蚀后硅片表面形貌的变化,对背腐蚀与刻边分离p-n结样品的光生电动势进行了比较,用能带理论对其差别做了深入的解释。
【Abstract】 Separating p-n junction by using of back etching method without surface protect was studied, also the surface by SEM pictures. The photo-induced voltage between the back etching and edge etching silicon were compared, explaining the difference by means of the theory of energy bands.
【基金】 上海市科委项目“高效多晶硅太阳电池关键技术及中试研究”的奖金支持项目(03DZ12028)
- 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,2007年02期
- 【分类号】TM914.4;TM54
- 【被引频次】1
- 【下载频次】95