【摘要】 采用磁控溅射技术在Si(Ⅲ)衬底上沉积了Al膜,在高温炉中使之与氨气反应制备AlN薄膜.利用X射线衍射、X射线光电子能谱、扫描电镜等研究了薄膜的结构、成分以及表面形貌.结果表明不同氨气作用时间会使薄膜表现出不同的择优生长取向,同时不同厚度的Al薄膜也会在氨气作用后生成不同择优生长取向的AlN薄膜.更多还原

【Abstract】 AIN films have been successfully prepared on Si(Ⅲ)substrates Via ammoniating the A1 films by r.f.magnetron sputtering .XRD,XPS and SEM were emplyed to characterized AlN thin films with structure.components and morphology.Analysis clearly shows the different time of sputtering and annealing process bring the AlN thin films different perfered growth orentation.更多还原