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Nd掺杂Bi₄Ti₃O₁₂陶瓷的制备及其电性能

Preparation of Bi₄Ti₃O₁₅ Ceramics with Nd-Doping and Its Electric Properties

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【Author】 FAN Su-hua~1,XU Jing~2,ZHANG Feng-qing~1,GUO Gui-fen~2,REN Yan-xia~2(1.Department of Materials Science and Engineering,Shandong University of Architecture and Engineering,Jinan 250101,China;2.School of Material Science and Engineering,University of Jinan,Jinan 250022,China)

【机构】山东建筑大学材料科学与工程系；济南大学材料科学与工程学院；济南大学材料科学与工程学院山东济南250101；山东济南250022；山东济南250101；

【摘要】采用固相烧结法制备了Nd掺杂Bi4-xNdxTi3O12(x=0,0.25,0.5,0.75,1)层状铋系钙态矿无铅介电陶瓷。利用XRD、SEM和宽频LCR数字电桥测试手段研究了Nd掺量、烧结温度和保温时间对Bi4-xNdxTi3O12(BNT)陶瓷晶相、显微结构及介电性能的影响。研究表明,本实验中Nd的最佳质量掺量为0.75,最佳烧结温度为1 050℃,保温时间为4 h,BNT陶瓷具有良好的介电性能。更多还原

【Abstract】 Bi_4-xNd_xTi₃O₁₂（x=0,0.25,0.5,0.75,1） layered bismuth-based lead-free dielectric ceramics were fabricated by the solid-synthesis.The effects of the amount of Nd doping,sintering temperature and annealing time on BNT ceramics’ crystal structure,microstructure and dielectric properties have been analyzed by XRD,SEM and LCR meter.The results indicated that the BNT ceramics with Nd doping of 0.75% annealed at 1?050?℃for 4 hours exhibited good dielectric properties.更多还原