节点文献

射频放电辅助热丝CVD金刚石生长速率的研究

Study on Growth Rate of Diamond Deposited by Radio Frequency Assisted HFCVD Method

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 孙心瑗周灵平李宇农易学华陈本敬

【Author】 SUN Xin-yuan1,ZHOU Ling-ping2,LI Yu-nong1,YI Xue-hua1,CHEN Ben-jing2(1.Department of Physics,Jinggangshan University,Ji’an 343009,China;2.College of Material Science and Engineering,Hunan University,Changsha 410082,China)

【机构】 井冈山学院物理系湖南大学材料科学与工程学院湖南大学材料科学与工程学院 吉安343009长沙410082吉安343009

【摘要】 在传统的HFCVD系统中,引入射频电源后,通过与灯丝或者衬底的连接,组成了射频放电辅助下的四种不同沉积金刚石的生长模式。在各种生长模式下,分别以酒精和丙酮为碳源,沉积出了金刚石多晶球,并就不同辅助模式下的金刚石的生长速率进行了研究。结果表明,等离子体增强法能够明显促进金刚石的生长,而电子促进法的生长速率最慢,甚至慢于偏压等离子体的生长速率;与等离子体促进增强法相比,偏压等离子体增强法的生长速率也有所变慢,并且随着偏压射频电流的增大,其生长速率越来越慢;而传统热丝法的生长速率与沉积金刚石时所选用碳源的分子结构有很大的关系。

【Abstract】 Diamond polycrystalline sphere were deposited via acetone and ethanol as carbon sources in HFCVD system respectively.Radio frequency discharge was applied in the system by connecting with either filament or substrate.So four different assisted-growth models were produced.Study on the rate of theses models was made in details.It is found that plasma enhancing can enhance growth rate of diamond dramatically.Growth rate of diamond under electron enhancing is slowest,Its rate is even slower than that of plasma enhancing with substrate biasing.Growth rate of plasma enhancing with substrate biasing gets slow when current of radio frequency discharge increases.However,growth rate of conventional HFCVD is related to the molecular structure of these carbon sources.

【基金】 井冈山学院校级资助课题(No.JZ0615)
  • 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2007年02期
  • 【分类号】O781
  • 【被引频次】4
  • 【下载频次】132
节点文献中: 

本文链接的文献网络图示:

本文的引文网络