【摘要】 Cu3N薄膜是近10年来研究的热点材料之一。Cu3N是立方反ReO3结构,理想立方反ReO3结构的一个晶胞中Cu原子占据立方边的中心位置而N原子占据立方晶胞的八个顶点,此结构的体心位置有一较大间隙,Cu原子以及其他原子如Pd、碱金属原子等很有可能进入此位置导致Cu3N的电学性能、光学性能等发生很大的变化,这使得该材料具有很大的潜在应用价值。Cu3N的晶格常数为0.3815nm,密度5.84g/cm3,分子量204.63,颜色呈黑绿色或红褐色,空间点群Pm3m。Cu3N薄膜在室温下相当稳定并且热分解温度较低(300℃左右),热分解前后薄膜的光学反射率有较大差别,这可使Cu3N薄膜用作一次性光记录材料。此外,Cu3N薄膜还可用作在S i片上沉积金属Cu线的缓冲层、低磁阻隧道结的阻挡层、自组装材料的模板等。更多还原

【Abstract】 In the last decades,the copper nitride films as a new material were studied extensively.The structure of copper nitride is cubic anti-ReO3.In the ideal anti-ReO3,Cu atoms occupy the center of the cubic edges and N atoms occupy the corners of the cell.This configuration is peculiar since Cu atoms do not occupy the face-centered cubic close-packing sites.As a consequence,this crystal structure has many vacant interstitial sites.If Cu atoms or other atoms are contained within these sites,electrical and optical properties of the copper nitride film may differ from those of ideal Cu3N.These enable the Cu3N thin film to have very extensive potential applicaticons.The lattice constant of ideal copper nitrde is 0.3815nm,the density is 5.84g/cm3,the molecular weight is 204.63 and the color of copper nitride is black green or red brown,the space group is Pm3m.The copper nitride film is very stable in room temperature and decomposed at lower temperature(about 300℃).The optical reflectance changes greatly before and after decomposition.This is critical for write-once optical recording materials.Besides above,the copper nitride films can also be used as barrier layers for depositing Cu-metal lines on Si wafers to achieve higher signal speed,an insulating barrier in magnetic tunnel junctions,and a template for growing self-assembled structures.更多还原