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加热功率波动对SAPMAC法生长蓝宝石晶体的影响
Effect of Heating Power Fluctuation on Sapphire Crystal Grown by SAPMAC Method
【摘要】 本文根据温度波在熔体介质中的传播理论,结合SAPMAC法蓝宝石晶体生长工艺特点,研究了由加热功率波动引起的温度波动对晶体生长的影响。研究表明由于氧化铝高温熔体具有较大的热扩散系数,温度波较容易传到固液界面引起界面温度起伏;界面的温度起伏会使晶体内产生气泡、空腔等缺陷。根据温度波的频率、幅值对氧化铝熔体的传递深度、衰减规律的关系,提出了提高系统热惯性、增加界面熔体包裹层厚度等抑制措施。
【Abstract】 According to the theory of the temperature wave’s spread in the melt medium,combine SAPMAC sapphire crystal growth technical characteristic,this paper studied the effectheating power fluctuation caused by temperature jump on crystal growth.Studies suggested that it has greater thermal diffusion coefficient because alumina high-temperature melt,temperature wave was relatively apt to pass to solid-liquid interface,so that caused the temperature of the interface to gurgitations;the gurgitations can make crystal defects,such as the bubble,void.According to the transmission and decay law of temperature wawe in the alumina melt,we proposed that improving the system hot inertia,increase interface melt parcel layers thickness etc to the inhibitory measure.
【Key words】 heating power fluctuation; temperature wave; sapphire; SAPMAC method;
- 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2007年02期
- 【分类号】O782
- 【被引频次】6
- 【下载频次】342