【摘要】 利用水溶液降温法生长了单掺4.4mol%三氟乙酸TGS晶体及双掺4.4mol%三氟乙酸和4.4mol%丙三醇TGS晶体,研究了晶体生长习性,并对其热释电系数、介电常数、居里点及电滞回线进行了测试,实验表明,单掺可将晶体的居里点提高至53.6℃,内偏压场得到一定改善,而在此基础上双掺可将晶体居里点进一步提高至55℃,同时其热释电性能得到显著提高,晶体优值可提高为纯TGS晶体的3.3倍。更多还原

【Abstract】 Single crystals of triglycine sulfate(TGS) were grown with one dopant of 4.4mol% trifluoro acetic acid and two dopants of 4.4mol% trifluoro acetic acid and 4.4mol% glycerol from aqueous solution by slow-cooling method.The growth morphology of the doped TGS crystals has been studied systematically.The pyroelectric coefficient,dielectric constant,Curie point and hysteresis loop were measured,too.The results show that the Curie point of the trifluoro acetic acid doped crystal can reach to 53.6℃,the inner bias voltage field is improved to some degree.However,on the base of this,the Curie point of the trifluoro acetic acid and glycerol doped TGS crystal raised to 55 ℃,the pyroelectric properties is improved obviously and the quality factor is 3.3 times of that of pure TGS crystal.更多还原