【摘要】 本文采用升华法沿着垂直于c轴方向的[1 ■00]方向生长6H-SiC单晶。利用光学显微镜对晶体表面及腐蚀后的晶片进行观察,发现沿[1 ■00]方向生长出的单晶与传统方法沿[0001]方向生长单晶有很多的不同之处,多型对于籽晶的继承性非常强,但是在生长过程中多型夹杂不会发生,该方法生长的晶体中没有发现螺位错(微管)缺陷。更多还原

【Abstract】 6H-SiC single crystals have been grown along the [1 ■00] direction by the sublimation method.The surfaces of crystal and etching wafer were observed by optical microscope.The crystals are different in many aspects from those grown along [0001] direction by conventional method.The polytypic structure of crystal grown in the [1 ■00] direction perfectly succeeds to that of the seed,and thus polytype inclusions never occur during growth.The crystal contains no screw dislocations and micropipes.更多还原