【摘要】 研究LDMOS在一次雪崩击穿后的大电流区,栅压对器件内部温度的影响。结果表明,有源区电流密度、功率密度和温度都随正栅压升高而增加,证明LDMOS在栅接地时比栅不接地时具有更好的静电放电能力。更多还原

【Abstract】 Effects of different gate voltages on the temperature of LDMOS at high current after first avalanche breakdown was investigated and physically analyzed.The study shows that the current density and power density increase with gate voltages,causing temperature in the active region to rise.It is demonstrated that gate-grounded LDMOS has better ESD capability than gate-coupled LDMOS.更多还原