【摘要】 针对SOI基LDMOS结构的特殊性,结合高压器件中击穿电压和比导通电阻的矛盾关系,以作者设计的几种新型横向高压器件为例,说明了利用电场调制和电荷对局域场的屏蔽效应来优化设计新型SOI LDMOS的新技术;同时,指出了这种新技术较传统设计方法的优缺点。更多还原

【Abstract】 In view of the particularity of SOI LDMOS,a new technology was developed,in which effects of the electric field modulation and charge shielding were utilized to design new types of SOI LDMOS.A number of typical lateral high-voltage devices were designed to further improve trade-off characteristics between breakdown voltage and specific on-resistance.Finally,advantages and disadvantages of this new technology are discussed,compared with the conventional methods.更多还原