【摘要】 报道了γ射线辐照对薄膜材料碲镉汞(Hg1-xCdxTe)制备的中波红外焦平面列阵探测器性能的影响。γ射线辐照的剂量依次为3×106rad、9×106rad、2×107rad．测量了器件在辐照前及各个剂量辐照后的I-V特性、黑体响应、噪声等性能参数。通过分析实验数据,发现器件的暗电流,噪声随辐照剂量的增加而增大,黑体响应随辐照剂量的增大而减小。其中I-V特性受辐照影响最大,黑体响应和噪声对辐照不是很敏感。这些表明随着辐照剂量的增加,器件的性能逐步衰退。更多还原

【Abstract】 The affects of gamma radiation on the performances of thin film HgCdTe MWIR FPA infrared detector is reparted. The different doses of gamma irradiation is 3×106 rad, 9×106 rad and 2×107 rad. The I-V characteristics, blackbody responses and noise were measured before and after each dose of irradiation. With the total dose increased, the current and noise of the device increased while blackbody responses decreased. The I-V characteristics were affected by gamma radiation seriously while blackbody responsively and blackbody responses was affected a little. These shows the performances of the device was degenerated as the dose of gamma irradiation increased.更多还原