节点文献
Photonic crystal vertical-cavity surface-emitting laser based on GaAs material
【摘要】 A photonic crystal vertical-cavity-surface-emitting laser (PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 μm with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.
【Abstract】 A photonic crystal vertical-cavity-surface-emitting laser (PC-VCSEL) with a wavelength of about 850 nm was realized. The direct-current electrically-driven PC-VCSELs with a minimum threshold current of 2 mA and a maximum threshold current of 13.5 mA were obtained. We fabricated a series of PC-VCSEL chips whose lattice constants are in the range from 0.5 to 3 μm with different filling factors, and found that the laser characterization depends on the lattice constant, the filling factor, the size of cavity, etc.
【Key words】 photonic crystal; vertical cavity surface emitting laser; single mode;
- 【文献出处】 Chinese Science Bulletin ,科学通报(英文版) , 编辑部邮箱 ,2007年18期
- 【分类号】O734
- 【下载频次】50