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一种指数补偿带隙基准源的设计

Design of an exponential-compensated bandgap reference

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【作者】 应建华李唯

【Author】 Ying Jianhua Li Wei(Department of Electronics Science and Technology,Huazhong Universityof Science and Technology,Wuhan 430074,China)

【机构】 华中科技大学电子科学与技术系华中科技大学电子科学与技术系 湖北武汉430074湖北武汉430074

【摘要】 设计了一种指数型曲线补偿的带隙基准源电路.利用Bipolar管的电流增益随温度呈指数型变化的特性,有效地对基准源进行指数型温度补偿.电路具有较低的温度系数,并且结构简单;利用深度负反馈的方法,可有效地抑制电源电压变化给带隙基准源所带来的影响,提高了电源抑制比;为了加大电路的带负载能力,该电路增加了输出缓冲级.用spectre工具对其进行仿真,结果显示在-40℃~85℃的温度范围内,电路具有12×10-6/℃的低温度系数;当电源电压在4.5 V到5.5 V之间变化时,基准源电压的变化量低于85μV.电路采用0.6μm BICMOS工艺实现.

【Abstract】 An exponential curvature-compensation bandgap reference(BGR) was designed,in which the temperature characteristics of the current gain of a bipolar transistor was employed.The reference has low temperature coefficient(TC) and this technique requires no additional circuits for the curvature compensation.The feedback circuit is employed,which satisfies the requirement of high power-supply rejection ratio(PSRR).In addition,a output buffer is used to enhance the circuit′ ability of driving load.Spectre tool are used for simulation.The simulation results show that circuit has a temperature coefficient(TC) of 12×10-6/℃ from-40 ℃ to 85 ℃ and the output voltage varies lower than 85 μV with the supply voltage range from 4.5 V to 5.5 V.The reference circuit is realized by 0.6 μm BICMOS(bipolar complementary metal-oxide-semiconductor) process.

【基金】 湖北省信息产业专项资金资助项目(05060)
  • 【文献出处】 华中科技大学学报(自然科学版) ,Journal of Huazhong University of Science and Technology(Nature Science Edition) , 编辑部邮箱 ,2007年06期
  • 【分类号】TN431
  • 【被引频次】6
  • 【下载频次】240
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