【摘要】 在Ce5.2Sm0.8-xPrxMoO15-δ体系中引入少量Pr得新氧化物Ce5.2Sm0.72Pr0.08MoO15-δ,通过X射线衍射(XRD),拉曼光谱(Raman),X射线光电子能谱(XPS),场发射扫描电镜(FE-SEM)等手段对氧化物结构进行分析,交流阻抗谱测试电性能;讨论掺杂少量Pr对Ce5.2Sm0.8MoO15-δ微观结构和电性能的影响.结果表明,少量Pr3+的掺杂可降低晶界电阻,增加离子扩散通道,降低体系的总电导激活能和晶界电导激活能,提高氧化物的总电导率和晶界电导率;500℃时掺Pr材料的晶界电导率为6.79×10-3S·cm-1,比未掺Pr材料的晶界电导率(5.61×10-5S·cm-1)提高约2个数量级.更多还原

【Abstract】 Material formulated as Ce5.2Sm0.8-xPrxMoO15-δ (x=0.08) was prepared by adding small amounts of Pr dopant in oxide Ce5.2Sm0.8-xPrxMoO15-δ. Structural and electrical properties were investigated by means of X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM) and AC impedance spectroscopy. The effect of small amounts of Pr on microstructure and electrical conductivity was discussed. It was showed that the material doped with Pr has a lot of dents and small openings, which provide channels for oxygen ions, resulting in lower grain boundary and total conductivity activation energy. Thus the corresponding grain boundary con- ductivity and total conductivity of the material were improved notably. The grain boundary conductivity of the material doped with Pr is 6.79×10-3 S·cm-1 at 500 ℃, which is twice as large as that without Pr (5.61×10-5 S·cm-1).更多还原