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ITO衬底上LiTaO3薄膜的制备与介电特性

PREPARATION AND DIELECTRIC PROPERTIES OF LiTaO3 THIN FILM ON THE ITO SUBSTRATE

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【作者】 张德银黄大贵李金华李坤但迪迪董政

【Author】 ZHANG De-Yin1,2,HUANG Da-Gui1,LI Jin-Hua3,LI Kun3,DAN Di-Di3,DONG Zheng1(1.Sch.of Mechatronics Eng.,Univ.of Electronic Sci.and Technol.,Chengdu 610054,China;2.Aviation Eng.Inst.,Civil Aviation Flight Univ.,Guanghan 618307,China;3.Functional Material Lab.,Jiangsu Ploytechnic Univ.,Changzhou 213016,China)

【机构】 电子科技大学机电工程学院江苏工业学院功能材料实验室电子科技大学机电工程学院 四川成都610054中国民航飞行学院航空工程学院四川广汉618307四川成都610054江苏常州213016

【摘要】 用溶胶凝胶法在ITO衬底上制备了钽酸锂(LiTaO3)薄膜,利用XRD、SEM和AFM对薄膜的晶向、表面形态等作了表征;研究了不同溶剂对LiTaO3溶胶稳定性的影响和不同退火条件对LiTaO3薄膜结晶的影响;利用Al/LiTaO3/ITO结构,测试了薄膜的介电系数和介电损耗.结果表明:每层薄膜都晶化退火比交替使用焦化、结晶退火能生长出质量更好的LiTaO3薄膜;频率1KHz时,介电损耗约0.4,相对介电系数约53.并讨论了介电损耗增大的原因.

【Abstract】 LiTaO3 thin films were prepared on the ITO substrate by sol-gel methods.The performance parameters such as orientation,surface morphology,grain size and the thickness of LiTaO3 thin film were studied by XRD,SEM and AFM.The influence of different solvents on the stability of LiTaO3 sols and the influence of different annealing condition on the preparation of LiTaO3 thin film were analyzed either.The relative dielectric coefficient and dielectric loss of the prepared LiTaO3 thin film were measured by using Al/LiTaO3/ITO structure electrode.The experimental results show that the quality of LiTaO3 thin film with every layer crystallized annealing is better than that with pyrolyzed and crystallized annealing alternately.The relative dielectric coefficient is about 53 and dielectric loss is about 0.4 when the measured frequency is 1kHz.The reason of increaing the dielectric loss of LiTaO3 thin film has been discussed.

【基金】 国家自然科学基金资助项目(60572007);中国民航飞行学院科研基金资助项目(J2005-25)
  • 【文献出处】 红外与毫米波学报 ,Journal of Infrared and Millimeter Waves , 编辑部邮箱 ,2007年03期
  • 【分类号】TM221
  • 【被引频次】15
  • 【下载频次】232
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