【摘要】 首次报道了利用相分凝技术在非晶石英衬底上立方ZnMgO基体中制备六方ZnO量子点的化学溶液方法。对所制备的ZnO/ZnMgO/SiO2进行了原子力显微镜(AFM)、X射线衍射(XRD)、光致发光(PL)、椭圆偏振光谱(SE)表征。XRD表征表明当六配位Zn2+以替位的形式取代六配位Mg2+时,会导致相同衍射条件下立方ZnMgO的2θ比立方MgO的2θ小。SE表征发现ZnO量子点的量子效应导致了ZnO量子点的激子吸收能(3.76eV)比ZnO体晶的能带隙(3.37eV)大。AFM表征表明:导致薄膜的XRD的衍射峰、α吸收峰和PL发射峰皆很宽的部分原因是由于组成所制备薄膜的晶粒尺寸分散较大、形状不一引起的。更多还原

【Abstract】 For the first time it has been reported a chemical solution method to fabricate hexagonal ZnO quantum dot in cubic ZnMgO matrix on amorphous SiO2 substrate by phase segregation technique.The prepared ZnO/ZnMgO/SiO2 has been characterized by means of AFM,XRD,photoluminescence(PL) as well as spectroscopic ellipsometry(SE).The tested result of XRD shows that under the same diffraction conditions,the 2θ of cubic ZnMgO is smaller than that of cubic MgO when 6 coordinated Mg2+ is substituted with ones of Zn2+.Spectroscopic ellipsometry indicates that the quantum effect of ZnO quantum dot leads to the fact that the absorption energy of exciton(3.76 eV) is bigger than the band gap of bulk ZnO.The characterization of AFM reveals that the broadenings for X ray diffraction peak,α absorption peak and photoluminescence peak are resulted from the morphology and structure of as-fabricated thin film,which is composed by a variety of sizes and various forms of grains.更多还原