【摘要】 优化设计了硅半导体芯片及桥区参数,并对SCB冲击片起爆HNS-Ⅳ炸药及影响发火能量的因素进行了试验研究。结果表明,致密性好的SCB多晶硅,厚度为4μm时,50%发火能量低,起爆重现性好。更多还原

【Abstract】 Parameters of silicon semiconductor chip and bridge section were designed and optimized.The initiation of HNS-Ⅳexplosive with SCB lapper was carried out and the factors influencing firing energy were studied.Results show that when thickness of SCB slapper with good compactness of polycrystalline silicon is 4 μm,the 50% firing energy is low,and initiation compactness is good.更多还原