【摘要】 采用脉冲激光沉积方法,在硅基片上先沉积 MgO 或 CeO2缓冲层后再制备 BaTiO3 (BTO)铁电薄膜。通过原位反射高能电子衍射来监测 MgO,CeO2 缓冲层在硅基片上的生长行为。用 X 射线衍射测定 BTO 薄膜的结晶取向。并利用压电响应力显微镜观察了铁电薄膜的自发极化形成的铁电畴。结果表明:BTO 薄膜在不同的缓冲层硅基片上以不同的取向生长,在织构的 MgO/Si(001)基片上为(001)择优,择优程度与 MgO 织构品质有关,其中在双轴织构 MgO 缓冲层上为(001)单一取向;在 CeO2(111)缓冲层上为(011)单一取向。(001)取向的 BTO 薄膜具有更大的面外极化,而(011)取向的 BTO薄膜具有更大的面内极化。更多还原

【Abstract】 Buffer layers of MgO(or CeO2)were first deposited on silicon substrates,and then BaTiO3(BTO)ferroelectric films were formed again by pulsed laser deposition.The growth of MgO,CeO2 buffer layers was monitored in-situ by the reflection high-energy electron diffraction,and the crystalline orientation of BTO films was investigated by X-ray diffraction.Furthermore,ferroelectric domains formed in BTO films by spontaneous polarization were observed by piezoresponse force microscopy.The results show that BTO films are grown with different crystal orientation on different buffer layers of silicon substrates.The BTO films grew preferen-tially along the(001)orientation on textured MgO/Si(001);the preferred degree is correlated to the texture characteristics.BTO films with texture characteristics on the(001)and(011)orientations were obtained on biaxial textured MgO and CeO2(111)buffer layers,respectively.BTO films with an(001)orientation exhibit a higher out-of-plane polarization,while the films grown along an(011)orientation show higher in-plane polarization.更多还原