【摘要】 采用化学-机械加工工艺加工ZnSe晶体器件。用X射线衍射分析技术测定晶体器件在加工过程中宏观应力的变化。结果表明:加工后器件的损伤层厚度接近为零。抛光后的器件和加工前的器件的宏观应力相近,表明用该工艺加工对器件的宏观应力影响小,这对器件的应用非常有利。加工实验表明:选用的工艺参数和抛光液对加工ZnSe晶体器件是成功的。更多还原

【Abstract】 ZnSe crystal devices were processed by the chemico-mechanical processing technique.Change of macroscopic stress in ZnSe devices during the processing was determined by X-ray diffraction analysis.The results show that the thickness of the damaged layer of ZnSe devices after processing was around zero,and the macroscopic stress in ZnSe devices after polishing was close to the value before processing.These results prove that the processing procedure only has a slight effect on macroscopic stress in ZnSe de-vices and that these procedures can be used in the preparation of ZnSe devices and are beneficial to the application of the devices.更多还原