【摘要】 采用蒙特卡罗方法,对以CH4/H2为源料气体的电子助进化学气相沉积(EACVD)金刚石中的氢原子(Hα,Hβ,Hγ)、碳原子C(2p3s→2p2:λ=165.7 nm)以及CH(A2Δ→X2Π:λ=420~440 nm)的发射过程进行了模拟,研究了不同CH4浓度下各发射谱线的空间分布。结果表明,不同CH4浓度下各发射谱线在反应空间的大部分区域内均随距灯丝距离的增大而增大,而当到达基片表面附近时有所减弱。随着CH4浓度的增加,H谱线强度减弱,CH与C谱线强度增强。更多还原

【Abstract】 The optical emission process of atomic hydrogen（H_α,H_β,H_γ）,atomic carbon C（2p3s→2p²:λ=165.7 nm） and radical CH（A²Δ→X²Π:λ=420-440 nm） in diamond film growth by electron-assisted chemical vapor deposition（EACVD） from a gas mixture of CH₄ and H₂ was studied using Monte-Carlo simulation.Spatial distributions of the emission lines were investigated.The spatial distributions of intensity of all these emission lines were the same on the whole,which increases with the distance from the filament and decreases near the substrate.The intensity of atomic hydrogen lines decreases with increasing CH₄ concentration,while that of CH and atomic C lines increases with increasing CH₄ concentration.更多还原