【摘要】 研究了新型SiCMOS电容的制备工艺。采用干O2+CHCCl3(TCE)热氧化方法生长6H-SiCMOS氧化层。研究了TCE浓度与SiC/SiO2界面态电荷密度和氧化层电荷密度和应力下平带电压漂移的关系,随着TCE浓度的增加,SiC/SiO2界面态电荷密度和氧化层电荷密度先减小后增大,应力下平带电压漂移减小,得出了最佳TCE:O2浓度比。更多还原

【Abstract】 A new processing of SiC MOS device is studied.The processing of oxidizing SiC in O2+ trichloroethylene(TCE) is presented for preparation of gate dielectrics of 6H-SiC MOS devices.The effects of the TCE concentration on the densities of interface states and oxide charges and the drift flatband voltage under pressure are studied.The result indicates that with the increase of the TCE concentration,the densities of interface states and oxide charges are decreased then increased while the drift of flatband voltage under pressure is decreased.The optimal concentration of TCE:O2is given.更多还原