节点文献
基于主方程单电子晶体管模拟新方法
Novel Simulation Method of Single Electron Transistor Based on Master Equation
【摘要】 在对单电子晶体管主方程模型及主方程的解法详细的分析的基础上,把单电子晶体管主方程模型和SP ICE的ABM功能结合,提出了基于主方程的单电子晶体管SP ICE模型。该模型由一个非线性电压控制电流源、非线性电压控制电压源、电容构成。并利用该模型对单电子晶体管V-I特性进行SP ICE模拟,同直接解主方程解法相比,仿真结果表明该模型具有合理的精确度。
【Abstract】 Basing on the analysis of master equation model of single electron transistors,we combine master equation model of single electron transistors with SPICE’ABM function.A SPICE model of single electron transistors based on the master equation is proposed.It consists of a nonlinear voltage-controlled current source,a nonlinear voltage-controlled voltage source,and capacitance.With the model,the V-I characteristics of single electron transistors are simulated with SPICE.The simulation results show that the model is reasonably precise comparing with the traditional methods.
【Key words】 single electron transistor(SET); master equation model; SPICE model; VI character;
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of SSE Solid State Electronics , 编辑部邮箱 ,2007年01期
- 【分类号】TN321
- 【被引频次】3
- 【下载频次】124