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La替代对Bi₂O₃-ZnO-Nb₂O₅陶瓷介电性能的影响

Dielectric properties of La-doped Bi₂O₃-ZnO-Nb₂O₅ based ceramics

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【Author】 LIU Pu-ling1,DING Shi-hua1,YANG Tong-qing1,SHEN Bo1,YAO Xi1,2(1.Functional Materials Research Lab.of Tongji University,Shanghai 200092,China;2.Research Lab.of Electronic Materials,Xi′an Jiaotong University,Xi′an 710049,China)

【机构】同济大学功能材料研究所；同济大学功能材料研究所上海200092；上海200092；西安交通大学电子材料研究所；西安710049；

【摘要】研究了A位La3+替代对Bi2O3-ZnO-Nb2O5(BZN)陶瓷结构和介电性能的影响。当La替代量x<0.5时,陶瓷相结构为单一的立方焦绿石相。随着La替代量的增加,陶瓷样品的晶粒尺寸和密度逐渐减小。低温下的介电弛豫现象随着La替代量的增加也发生有规律的变化,介电常数逐渐减小,弛豫峰峰形逐渐宽化,峰值温度向低温方向移动。与La替代量为0.1、0.15、0.3和0.5相对应的弛豫峰的峰值温度分别为-95℃、-99℃、-109℃和-112℃。更多还原

【Abstract】 The structure and dielectric properties of La-doped Bi2O3-ZnO-Nb2O5 ceramics were investigated.The sample exhibits a single cubic pyrochlore phase at La3+ substitution <0.5.The grain size and density values decrease with the increasing of La3+ substitution.The relaxation behavior under low temperature exhibits a regular change with La3+ substitution.The dielectric constant of BZN samples decrease and the peak temperature of dielectric relaxation moves towards low temperature with the increasing of La3+ substitution.When the substitution content of La3+ increase from 0.1 to 0.5,the peak temperature moves from-95℃ to-112℃ at 1MHz,respectively.更多还原