【摘要】 在Si(111)衬底上,采用SiH4-C3H8-H2气体反应体系,通过低压化学气相沉积(LPCVD)工艺外延出结晶质量良好的SiC薄膜。低温光致发光谱表明该薄膜属于6H-SiC多型体。X射线衍射图表明该薄膜具有高度的择优取向性。扫描电子显微镜图表明该薄膜由片状SiC晶粒组成。拉曼光谱和透射电子衍射谱的结果进一步表明该薄膜具有较高的结晶质量。对Si(111)衬底上6H-SiC薄膜的生长机制进行了初步探讨。更多还原

【Abstract】 6H-SiC films were grown on Si(111) substrates by LPCVD(low pressure chemical vapor deposition) with gas mixtures of SiH4,C3H8 and H2.6H-SiC polytype of the films were confirmed by LTPL(low temperature photoluminescence).XRD pattern shows the film is of high crystalline quality.The result of SEM(scan electron microscope) image indicates the films consist of tabular SiC grains.TED(transmitted electron diffraction) pattern further shows that the films are of high quality.The growth mechanism for formation of 6H-SiC films on Si(111) substrates was briefly discussed.更多还原