【摘要】 采用金属有机物化学气相淀积(MOCVD)技术,对p型GaN∶Mg的均匀掺杂,delta掺杂和生长停顿掺杂3种不同掺杂方法的外延片研究,通过对电学的、光学的、表面形貌分析表明,生长停顿方法的外延片有较好的晶体质量,但因生长停顿过程中引入额外杂质增加自补偿效应;delta掺杂方法明显提高了空穴浓度,降低了电阻率,提高空穴迁移率,取得较好的表面形貌。更多还原

【Abstract】 Uniformity-doping,δ-doping and growth-interruption-doping GaN:Mg has been investigated by metal-organic chemical vapor deposition.It was demonstrated through electrical,optical,and surface studies that the film of growth-interruption-Mg-doping have better crystal quality than others two,this doping method increase self-compensation because of the incorporation of additional impurities during the interruption period.Mg-δ-doping significantly enhance hole concentration leading to reduced p-type resistivity,enhanced hole mobility,also obtain smooth surface morphology.更多还原