节点文献
HgInTe晶体的生长及其性能研究
Study on growth and properties of mercury indium telluride single crystal
【摘要】 利用垂直Bridgman法生长了HgInTe单晶体,并采用X射线衍射分析、FT-IR光谱分析对晶体的形态结构及红外透过性能进行了检测,结果表明所生长的晶体是高质量的单相完整单晶体,其在400~4000cm-1范围内的红外透过性能较好,达到50%~55%,晶体对红外光的吸收主要为晶格吸收和自由载流子吸收引起的。
【Abstract】 HgInTe single-crystal has been grown by vertical Bridgman method and was investigated by means of X-ray analysis and FT-IR.The results showed that the as-grown crystal was single-phase crystal with high quality.The infrared transmittance in the middle and far infrared region was about 50%~55%.The absorption of the crystal to the infrared light was mainly lattice absorption and free carriers absorption.
【关键词】 HgInTe;
晶体生长;
垂直布里奇曼法;
光电半导体材料;
近红外探测器;
【Key words】 HgInTe; crystal growth; vertical Bridgman method; photovoitaic semiconductors; NIR detector;
【Key words】 HgInTe; crystal growth; vertical Bridgman method; photovoitaic semiconductors; NIR detector;
【基金】 国家自然科学基金资助项目(50336040);西北工业大学博士创新基金资助项目(CX200606);西北工业大学研究生种子基金资助项目(200612)
- 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2007年06期
- 【分类号】O782
- 【被引频次】5
- 【下载频次】120