【摘要】 采用磁控溅射的方法制备了CoFe/CrPt钉扎的交换偏置体系,用外加磁场真空退火以获得钉扎场。通过把反铁磁的FeMn掺入到该钉扎体系中发现,约0.7nm厚度的FeMn掺入在CoFe/CrPt的界面时,可以使体系的钉扎场从原来的5.6×103A/m增加到1.55×104A/m,而体系的Blocking温度仍然可以达到600℃。更多还原

【Abstract】 CoFe/CrPt exchange biased system was prepared by magnetron sputtering.In order to appear pinning effect,the films were annealed in a vacuum with applied magnetic field.By introduce antiferromagnetic FeMn into the system,we found that about 0.7nm thickness FeMn into the interface of CoFe/CrPt increase the pinning field from the initial 5.6×103A/m to 1.55×104A/m, and the high Blocking temperature of about 600℃ can also be kept.更多还原