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氨化Si基Ga₂O₃/Ti制备GaN纳米线

Synthesis of GaN nanowires by ammoniating sputtered Ga₂O₃/Ti films on Si substrates

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【Author】 SUN Li-li1,XUE Cheng-shan1,AI Yu-jie1,SUN Chuan-wei2,ZHUANG Hui-zhao1,ZHANG Xiao-kai1,WANG Fu-xue1,CHEN Jin-hua1,LI Hong1(1.Semiconductor Research Institute,Shandong Normal University,Ji’nan 250014,China; 2.School of Information Science and Engineering,Ji’nan University,Ji’nan 250022,China)

【机构】山东师范大学半导体研究所；济南大学信息科学与工程学院；山东师范大学半导体研究所山东济南250014；山东济南250014；山东济南250022；

【摘要】采用磁控溅射技术先在硅衬底上制备Ga2O3/Ti薄膜,然后在950℃时于流动的氨气中进行氨化反应制备GaN薄膜。X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米线。通过扫描电镜(SEM)观察发现纳米线的形貌,纳米棒的尺寸在50~150nm之间。更多还原

【Abstract】 GaN thin films were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/Ti thin films deposited by magnetron sputtering.The results of XRD,FTIR,SAED and HRTEM confirm that the as-grown films are single-crystal hexagonal GaN with wurtzite structure.We observed the morphology of GaN nanorods by SEM,we found that the diameter of GaN nanorods between 50 to 150nm.更多还原